SIMS Sputter Process  

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500 eV -10 keV Cs or O primary beam emitting positively (+ve) and negatively (-ve) charged ions and molecules

 

   Applications of SIMS 

  • Dopant , & impurity measurements   

  • Dopent Diffusion , Junction depth

  • Ultra low detection limits of O, C and H
    ( e.g. 1E16 at/cc O in AlGaAs)
     

   Materials 

  • Si & SiGe hetrostructure 

  • GaAs, AlGaAS, InP, AlInP

  • GaN , InGa, AlGaN , AlN, Diamond

  • PSG , Oxides 

   ule-SIMS of B in Silicon 

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   High Resolution ule-SIMS

  • Small pre-equilibrium region

  • Excellent depth resolution (2 nm/decade)

  • Also see TOF-SIMS