Applications of SIMS Depth Profiling Analysis  

• Layer Composition  

• Dopant Diffusion Measurements

• Dose Measurements 

• Impurity and Contamination assessments

• Junction Depth 

• Ultra low DL of  gaseous impurities (O, N, C and H)

• Reverse Engineering
   

   Materials 

• Si , SiGe , SiC

• PSG , BPSG , Oxides , Nitrides

• GaAs, AlGaAS, InP, AlInP

• GaN , InGaN, AlGaN , AlN, Diamond

SIMS Process

500 eV -10 keV Cs or O primary beam emitting positively (+ve) and negatively (-ve) secondary  ions and molecules