SIMS Sputter Process

500 eV -10 keV Cs or O primary beam emitting positively (+ve) and negatively (-ve) charged ions and molecules
Applications of SIMS
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Dopant , & impurity measurements
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Dopent Diffusion , Junction depth
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Ultra low detection limits of O, C and H
( e.g. 1E16 at/cc O in AlGaAs)
Materials
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Si & SiGe hetrostructure
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GaAs, AlGaAS, InP, AlInP
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GaN , InGa, AlGaN , AlN, Diamond
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PSG , Oxides
ule-SIMS of B in Silicon

High Resolution ule-SIMS
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Small pre-equilibrium region
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Excellent depth resolution (2 nm/decade)
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Also see TOF-SIMS