SIMS Sputter Process  

500 eV -10 keV Cs or O primary beam emitting positively (+ve) and negatively (-ve) charged ions and molecules

   Applications of SIMS 

• Dopant , & impurity measurements   

• Dopent Diffusion , Junction depth

• Ultra low detection limits of O, C and H
  ( e.g. 1E16 at/cc O in AlGaAs)
   

   Materials 

• Si & SiGe hetrostructure 

• GaAs, AlGaAS, InP, AlInP

• GaN , InGa, AlGaN , AlN, Diamond

• PSG , Oxides 

   ule-SIMS of B in Silicon 

   High Resolution ule-SIMS

• Small pre-equilibrium region

• Excellent depth resolution (2 nm/decade)

• Also see TOF-SIMS