Applications of SIMS Depth Profiling Analysis  

  • Layer Composition  

  • Dopant Diffusion Measurements

  • Dose Measurements 

  • Impurity and Contamination assessments

  • Junction Depth 

  • Ultra low DL of  gaseous impurities (O, N, C and H)

  • Reverse Engineering
     

   Materials 

  • Si , SiGe , SiC

  • PSG , BPSG , Oxides , Nitrides

  • GaAs, AlGaAS, InP, AlInP

  • GaN , InGaN, AlGaN , AlN, Diamond

SIMS Process

500 eV -10 keV Cs or O primary beam emitting positively (+ve) and negatively (-ve) secondary  ions and molecules