SIMS Process

   Applications of  Depth Profiling SIMS (DSIMS)  

  • Layer Composition  

  • Dopant Diffusion Profiling

  • Dose Measurements 

  • Impurity and Contamination assessment

  • Junction Depth 

  • Ultra low DL (1E16 at/cc) of  gaseous impurities (O, N, C and H)

  • Reverse Engineering
    ( Also see
    SRP Analysis )

   Materials 

  • Si , SiGe , SiC

  • PSG , BPSG , Oxides , Nitrides

  • GaAs, AlGaAS, InP, AlInP

  • GaN , InGaN, AlGaN , AlN, Diamond

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500 eV -10 keV Cs or O primary beam emitting positively (+ve) and negatively (-ve) secondary  ions and molecules