SIMS is an extremely sensitive sputter depth profiling technique used to measure the  concentration of dopants and impurities in solids as a function of depth. A variation is to use  ultra-low energy primary beams (ULE SIMS)  which significantly reduces the near surface 'pre-equilibrium' region; essential for accurate near surface & low energy implant analyses.  This also markedly reduces the 'ion beam mixing effects' thereby providing a depth resolution of 1-2 nm under non-roughening conditions.

If sputter induced roughening is unavoidable (as in metals or polycrystalline materials) sample rotation is the best route for achieving good depth resolution.​

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​Applications​

• Dopant Diffusion Profiling: e.g. B, P, As in Si; N and Al in SiC and Zn, Si, Be etc in compound semiconductors

• Dose Measurements: Implant dose and energy, including low energy implants.

• Impurity Measurements: Trace elements (e.g. O, C, N, H) introduced during synthesis, deposition, or growth.

• Matrix Composition:  Quantitative  measurement of matrix composition of  heterostructures in compound semiconductors.

• Reverse Engineering: Doping concentrations, diffusion profiles and layer thicknes
  Also see SRP Analysis and TOF SIMS
   

 Materials 

• Silicon Technology 
  SiC , SIGe,  Barrier Oxides, PSG, BPSG

• III-V Compound Semiconductors
  GaAs, AlGaAs, InP, AlInP

• Nitrides (Wide-Bandgap Materials)
  GaN, InGaN, AlGaN, CdTe