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Applications of Depth Profiling SIMS (DSIMS)
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Layer Composition
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Dopant Diffusion Profiling
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Dose Measurements
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Impurity and Contamination assessment
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Junction Depth
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Ultra low DL (1E16 at/cc) of gaseous impurities (O, N, C and H)
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Reverse Engineering
( Also see SRP Analysis )
Materials
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Si , SiGe , SiC
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PSG , BPSG , Oxides , Nitrides
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GaAs, AlGaAS, InP, AlInP
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GaN , InGaN, AlGaN , AlN, Diamond
SIMS of 1 keV B implant in Silicon

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