Spreading Resistance Profiling (SRP)

 

SRP is a technique for the  measurement of “resistivity”  and electrically  active dopant concentrations versus depth in silicon.

The technique involves the preparation of a suitable bevel and then the measurement of resistivity across the bevel using  a pair of probes.

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Key Applications 

• Profiling of  electrically active p-type and n-type dopants   

• Junction Depth evaluation

• Shallow or very deep profiles 

• High dynamic range and extremely low detection limits   

Materials 

• Works for silicon

• Patterned wafers or plain wafers

• Alternative techniques are SIMS Analysis or  ECV