Spreading resistance profiling (SRP) is a technique for the  measurement of “resistivity” versus depth in Si semiconductors.The technique involves the preparation of a suitable bevel and then the measurement of resistivity across the bevel using  a pair of probes.

 

From this the carrier concentration of the electrically active dopants ( p-type  or n-type)  can be derived

 

Applications of Spreading Resistance Profiling (SRP)  

  • Dopant  Profiling of  electrically active p-type and n-type species    

  • Junction Depth evaluation

  • Shallow or Deep Profiles 

  •  Processed Wafers ( small pads ) or  Plain Wafers  

  • High Dynamic Range and extremely low detection limits   


Limitations 

  • Only works for Silicon

  • Alternative techniques are SIMS Analysis or  ECV 

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