Spreading Resistance Profiling (SRP) is a technique for the  measurement of “resistivity”  and dopant concentration versus depth in Si.

The technique involves the preparation of a suitable bevel and then the measurement of resistivity across the bevel using  a pair of probes.

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 Key Applications 

• Profiling of  electrically active p-type and n-type dopants   

• Junction Depth evaluation

• Shallow or deep profiles 

• Processed wafers or  plain pafers  

• High dynamic range and extremely low detection limits   

Limitations 

• Only works for silicon

• Alternative techniques are SIMS Analysis or  ECV