MATERIALS ANALYSIS SERVICE SUPPORTING INDUSTURY AND RESEARCH
Analytical Techniques and Detection Limits
DEPTH PROFILING
Secondary Ion Mass Spectrometry (SIMS)
Elemental depth profiling, of dopants and impurities
Time-of-Flight Ion Mass Spectrometry (TOF SIMS)
High resolution depth profiling,
Surface and interface contamination, 2D-3D mapping
Spreading Resistance Profiling (SRP)
Depth profiling of electrically active (n-type and p-type) dopants
X-Ray Photoelectron Spectroscopy (XPS)
Quantitative analysis including chemical state information.
Angle resolved mode for non-destructive near surface depth profiling
SURFACE CONTAMINATION
Vapour Phase Decomposition ICP-MS (VPD-ICP-MS)
Ultra-low level impurity measurements on wafer surfaces
Total X-Ray Fluorescence analysis (TXRF)
Trace element impurity mapping on wafer surface
Complements VPD- ICPMS
ION BEAM ANALYSIS
Rutherford Backscattering Spectrometry (RBS)
Quantitative composition of films and high z impurities
Channelling mode for crystalline damage and crystal quality
Time of Flight Elastic Recoil Detection (TOF ERDA)
Quantitative depth profiling including Hydrogen
Medium Energy Ion Scattering (MEIS)
High depth resolution compositional and structural information
MICROSCOPY and IMAGING
Transmission Electron Microscopy (TEM and STEM)
Microstructure, layer thickness and interfacial defects analysis
Focused Ion Beam Imaging (FIB)
Ion or electron induced imaging of a milled cross section with a resolution of 2 -7 nm
Scanning Electron Microscopy (SEM EDX)
High resolution electron microscopy and elemental maps with EDX
Atomic Force Microscopy (AFM)
Surface roughness measurements, step height and particle imaging with sub nm resolution
White Light Interferometry (WLI)
Surface roughness measurement with sub nm resolution in Z scale . 0.5 um in X and Y.