Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

 

• High mass resolution with mass range  0-12000 a.m.u.

• Depth profiling using sub keV O or Cs beams (nm depth resolution) 

• 2-D and 3-D ion imaging (100 nm lateral resolution )

• Parallel detection - A significant benefit for detecting unknown contaminants at interfaces and analysis of unknown  complex structures

• Retrospective  reconstruction of data (including depth profiles) from any region of interest (ROI)  post acquisition - off line.
  Also see  DSIMS

Applications

• High depth resolution dopant profiling

• Surface and interface contamination assessment (organic and inorganic)​

• 2D and 3D chemical imaging and mass spectra

• Depth profiling of organic materials

• Reverse engineering  
   

Materials 

• Semiconductor materials and processed devices 

• Oxides, high k and low k dielectics

• Thin films and coatings

• Optical coatings 

• Diamond and related materials